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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3740
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver.
ORDERING INFORMATION
PART NUMBER 2SK3740-ZK PACKAGE TO-263 (MP-25ZK)
(TO-263)
FEATURES
* Gate voltage rating: 30 V * Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A) * Low gate charge QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) * Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
250 30 20 60 1.5 100 150 -55 to +150 20 40
V V A A W W C C A mJ
Total Power Dissipation Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 125 V, RG = 25 , VGS = 20 0 V, L = 100 H
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16913EJ1V0DS00 (1st edition) Date Published November 2003 NS CP(K) Printed in Japan
2003
2SK3740
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 250 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 125 V, ID = 10 A VGS = 10 V RG = 0
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
2.5 7.0
3.5 15 0.12 1720 330 170 17 17 49 9
4.5
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
0.16
pF pF pF ns ns ns ns nC nC nC V ns
VDD = 200 V VGS = 10 V ID = 20 A IF = 20 A, VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 100 A/s
47 7 25 0.91 210 1.4
VF(S-D) trr Qrr
C
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 Starting Tch = 1 s Duty Cycle 1% ID
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS
Wave Form
50
RG
0
10%
VGS
90%
VDD ID
90% 90%
IAS ID VDD
ID
0 10% 10%
td(on) ton
tr td(off)
toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D16913EJ1V0DS
2SK3740
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C PT - Total Power Dissipation - W
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100
ID(DC) PW = 100
ID - Drain Current - A
10
ID(pulse)
1
RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited
1 ms 10 ms
0.1
0.01 0.1 1 10 100 1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 83.3C/W 100 10 1 0.1 0.01 0.001 100
Rth(ch-C) = 1.25C/W
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16913EJ1V0DS
3
2SK3740
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
70 60
ID - Drain Current - A
100 VGS = 10 V Pulsed
ID - Drain Current - A
10 1 0.1 0.01 0.001 0.0001
VDS = 10 V Pulsed
50 40 30 20 10 0 0 5 10 15 20 25 30 35 40
VDS - Drain to Source Voltage - V
TA = 150C 125C 75C 25C -40C
0
1
2
3
4
5
6
7
8
9 10 11 12
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
4.5 4 3.5 3 2.5 2 -50 -25 0 25 50
VDS = 10 V ID = 1.0 mA
100 VDS = 10 V Pulsed 10
1 TA = -40C 25C 75C 125C 150C 0.1 1 10 100
0.1
75 100 125 150 175
0.01 0.01
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
500 450 400 350 300 250 200 150 100 50 0 1 10
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
400 350 300 250 200 150 100 50 0 3 4 5 6 7 8 9 10 11 12
VGS - Gate to Source Voltage - V
VGS = 10 V Pulsed
Pulsed ID = 20 A 10 A 4A
100
4
Data Sheet D16913EJ1V0DS
2SK3740
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
350 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - C Ciss, Coss, Crss - Capacitance - pF
10000
VGS = 10 V Pulsed
VGS = 0 V f = 1.0 MHz Ciss
1000
ID = 20 A 10 A
100 Crss 10 0.1 1 10 100
Coss
1000
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
350
VDD = 125 V VGS = 10 V RG = 0
300 250 200 150 100 50 0 VDS VGS VDD = 200 V 125 V 50 V
12 10 8 6 4 2 0 0 10 20 30 40 50
QG - Gate Charge - nC
100 td(on) 10 tr
td(off)
tf
1 0.1 1 10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
100
trr - Reverse Recovery Time - ns
1000
Pulsed
IF - Diode Forward Current - A
VGS = 0 V di/dt = 100 A/s
10
VGS = 10 V
1 0V 0.1
100
0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
10 0.1 1 10 100
IF - Diode Forward Current - A
Data Sheet D16913EJ1V0DS
5
VGS - Gate to Source Voltage - V
ID = 20 A
14
2SK3740
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
100
IAS - Single Avalanche Current - A Energy Derating Factor - %
100 80 60 40 20 0
IAS = 20 A
VDD = 125 V RG = 25 VGS = 20 0 V IAS 20 A
10 VDD = 125 V RG = 25 VGS = 20 0 V Starting Tch = 25C 1 0.01 0.1
EAS = 40 mJ
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D16913EJ1V0DS
2SK3740
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZK)
10.00.3 No plating 7.88 MIN. 4
1.350.3
4.450.2 1.30.2
8.0 TYP.
9.150.3
15.250.5
0.025 to 0.25
0.5
0.750.2 2.54 1 2 3
0.2 8o
0 to
0.25 1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2.540.25
Data Sheet D16913EJ1V0DS
7
2SK3740
* The information in this document is current as of November, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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